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BAS 125W Silicon Schottky Diodes * For low-loss, fast-recovery, meter protection, bias isolation and clamping applications * Integrated diffused guard ring * Low forward voltage 3 2 1 BAS 125W BAS 125-04W 3 1 3 EHA07002 VSO05561 BAS 125-05W 3 BAS 125-06W 3 1 2 EHA07005 1 2 EHA07004 1 2 EHA07006 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAS 125W BAS 125-04W BAS 125-05W BAS 125-06W Maximum Ratings Parameter Diode reverse voltage Forward current 13s 14s 15s 16s 1=A 1 = A1 1 = A1 1 = C1 2 n.c. 2 = C2 2 = A2 2 = C2 3=C 3 = C1/A2 3 = C1/2 3 = A1/2 SOT-323 SOT-323 SOT-323 SOT-323 Symbol VR IF IFSM Ptot Ptot Tj Top Tstg Value Unit 25 100 500 250 250 150 -55 ... 150 -55 ... 150 310 425 230 265 V mA mW C Surge forward current (t< 100s) Total power dissipation BAS 125W, TS = 93 C BAS 125-04W, -05W, -06W Junction temperature Operating temperature range Storage temperature Thermal Resistance , TS = 84 C Junction - ambient 1) BAS 125W Junction - ambient 1) BAS 125-04W ... Junction - soldering point BAS 125W Junction - soldering point BAS 125-04W ... RthJA RthJA RthJS RthJS K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu 1 Oct-19-1999 BAS 125W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz CT Unit max. nA typ. IR VF 385 530 800 400 650 950 100 150 mV - 16 1.1 - pF Rf 2 Oct-19-1999 BAS 125W Forward current IF = f (TA *;TS ) * Package mounted on epoxy BAS 125W 100 mA 80 70 TS IF 60 50 40 30 20 10 0 0 20 40 60 80 TA 100 120 C 150 TA,TS Permissible Pulse Load RthJS = f (tp ) BAS 125W 10 3 Permissible Pulse Load IFmax / IFDC = f (t p) BAS 125W 10 2 K/W IFmax / IFDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Oct-19-1999 BAS 125W Forward current IF = f (TA *;TS ) * Package mounted on epoxy BAS 125-04W ... (IF per diode) 100 mA 80 TS 70 IF 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 150 TA TA,TS Permissible Pulse Load RthJS = f (tp ) BAS 125-04W ... 10 3 Permissible Pulse Load IFmax / IFDC = f (tp) BAS 125-04W ... 10 2 K/W IFmax / IFDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Oct-19-1999 BAS 125W Forward current IF = f (VF ) TA = Parameter 10 2 BAS 125... EHD07115 Diode capacitance CT = f (VR) f = 1MHz BAS 125... EHD07117 1.0 CT pF 0.8 F mA 10 1 TA = -40C 25 C 85 C 150 C 0.6 10 0 0.4 10 -1 0.2 10 -2 0.0 0.5 V VF 1.0 0.0 0 10 V VR 20 Reverse current IR = f (VR ) TA = Parameter 10 1 BAS 125... EHD07116 Differential forward resistance rf = f (IF) f = 10 kHz 10 4 rf 10 3 BAS 125... EHD07118 R A 10 0 TA = 125 C TA = 85 C 10 -1 10 2 10 -2 TA = 25 C 10 1 10 -3 0 10 V VR 20 10 0 10 -2 10 -1 10 0 10 1 mA 10 2 F 5 Oct-19-1999 |
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